1n 5711 small signal schottky diode description metal to silicon junction diode featuring high break- down, low turn-on voltage and ultrafast switching. primarly intended for high level uhf/vhf detection and pulse application with broad dynamic range. matched batches are available on request. november 1994 do 35 (glass) symbol parameter value unit v rrm repetitive peak reverse voltage 70 v i f forward continuous current* t a = 25 c 15 ma p tot power dissipation* t a = 25 c 430 mw t stg t j storage and junction temperature range - 65 to 200 - 65 to 200 c t l maximum lead temperature for soldering during 10s at 4mm from case 230 c absolute ratings (limiting values) symbol test conditions value unit r th(j-a) junction-ambient* 400 c/w thermal resistance * on infinite heatsink with 4mm lead length ** pulse test: t p 300 m s d < 2% . matched batches available on request. test conditions (forward voltage and/or capacitance) according to customer specification. symbol test conditions min. typ. max. unit v br t amb = 25 ci r = 10 m a 70 v v f * * t amb = 25 ci f = 1ma 0.41 v t amb = 25 ci f = 15ma 1 i r * * t amb = 25 cv r = 50v 0.2 m a static characteristics electrical characteristics symbol test conditions min. typ. max. unit c t amb = 25 cv r = 0v f = 1mhz 2pf t t amb = 25 ci f = 5ma krakauer method 100 ps dynamic characteristics 1/3
2/3 figure 1. forward current versus forward voltage at low level (typical values). figure 2. capacitance c versus reverse applied voltage v r (typical values). figure 3. reverse current versus ambient temperature. figure 4. reverse current versus continuous reverse voltage (typical values). 1n 5711
cooling method : by convection and conduction marking: clear, ring at cat hode end. weight: 0.15g package mechanical data do 35 glass information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsabi lity for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result f rom its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specifications ment ioned in this publication are subject to ch ange without notice. this publi cation supersedes and replaces all information previously supplied. sgs-thomson microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of sgs-thomson microelectronics. ? 1994 sgs-thomson microelectronics - printed in italy - all rights reserved. sgs-thomson microelectronics group of companies australia - brazil - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the netherlands singapore - spain - sweden - switzerland - taiwan - united kingdom - u.s.a. note 2 ba b c note 1 note 1 d d o / o / o / e e ref. dimensions notes millimeters inches min. max. min. max. a 3.050 4.500 0.120 0.117 1 - the lead diameter ? d is not controlled over zone e 2 - the minimum axial lengh within which the device may be placed with its leads bent at right angles is 0.59"(15 mm) b 12.7 0.500 ? c 1.530 2.000 0.060 0.079 ? d 0.458 0.558 0.018 0.022 e 1.27 0.050 3/3 1n 5711
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